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FDC2612
Power MOSFET, N Channel, 200 V, 1.1 A, 0.605 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.010 |
| 10+ | $0.717 |
| 25+ | $0.643 |
| 50+ | $0.567 |
| 100+ | $0.493 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC2612
Newark Part No.31Y1343
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id1.1A
Drain Source On State Resistance0.605ohm
On Resistance Rds(on)0.605ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd1.6W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC2612 is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- Fast switching speed
- 8nC typical low gate charge
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.605ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
4V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.1A
On Resistance Rds(on)
0.605ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
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Product Compliance Certificate
Product traceability