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FDC6310P
Dual MOSFET, P Channel, 20 V, 20 V, 2.2 A, 2.2 A, 100 mohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.235 |
| 6000+ | $0.231 |
| 12000+ | $0.215 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$705.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6310P
Newark Part No.58K1418
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id2.2A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel2.2A
Continuous Drain Current Id P Channel2.2A
Drain Source On State Resistance N Channel100mohm
Drain Source On State Resistance P Channel100mohm
Transistor Case StyleSOT-23
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6310P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
2.2A
Drain Source On State Resistance P Channel
100mohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
2.2A
Drain Source On State Resistance N Channel
100mohm
Transistor Case Style
SOT-23
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate