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FDMC6679AZ
Power MOSFET, P Channel, 30 V, 20 A, 8.6 mohm, MLP, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.720 |
| 10+ | $1.190 |
| 25+ | $1.090 |
| 50+ | $0.998 |
| 100+ | $0.906 |
| 250+ | $0.807 |
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Multiple: 1
$1.72
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC6679AZ
Newark Part No.88T3264
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance8.6mohm
On Resistance Rds(on)0.0086ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd41W
Gate Source Threshold Voltage Max1.8V
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDMC6679AZ is a P-channel MOSFET produced using PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 8kV typical HBM ESD protection level
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.0086ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
41W
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
8.6mohm
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability