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FQA8N100C
Power MOSFET, N Channel, 1 kV, 8 A, 1.2 ohm, TO-3PN, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $5.110 |
| 10+ | $4.880 |
| 25+ | $4.710 |
| 50+ | $4.540 |
| 100+ | $4.490 |
| 250+ | $4.440 |
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Multiple: 1
$5.11
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQA8N100C
Newark Part No.31Y1509
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id8A
On Resistance Rds(on)1.2ohm
Drain Source On State Resistance1.2ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Power Dissipation Pd225W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation225W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The FQA8N100C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (53nC)
- Low Crss (16pF)
- 100% avalanche tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1kV
On Resistance Rds(on)
1.2ohm
Transistor Case Style
TO-3PN
Power Dissipation Pd
225W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
225W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability