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FQD7N20LTM
Power MOSFET, N Channel, 200 V, 5.5 A, 0.59 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFQD7N20LTM
Newark Part No.54AH8755
Product RangeQFET Series
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD7N20LTM
Newark Part No.54AH8755
Product RangeQFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id5.5A
Drain Source On State Resistance0.59ohm
On Resistance Rds(on)0.59ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation45W
Power Dissipation Pd45W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET Series
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.59ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
45W
No. of Pins
3Pins
Product Range
QFET Series
SVHC
Lead (27-Jun-2024)
Channel Type
N Channel
Continuous Drain Current Id
5.5A
On Resistance Rds(on)
0.59ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
45W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate