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KSD1616AGBU
Bipolar (BJT) Single Transistor, NPN, 60 V, 1 A, 750 mW, TO-226AA, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $0.130 |
| 10+ | $0.130 |
| 100+ | $0.120 |
| 500+ | $0.110 |
| 1000+ | $0.110 |
| 2500+ | $0.110 |
| 10000+ | $0.102 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoKSD1616AGBU
Newark Part No.31Y2173
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Continuous Collector Current1A
Power Dissipation Pd750mW
Power Dissipation750mW
DC Collector Current1A
Transistor Case StyleTO-226AA
DC Current Gain hFE200hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency160MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The KSD1616AGBU is a 60V NPN Epitaxial Silicon Transistor designed for audio frequency power amplifier and medium speed switching applications. This product is general usage and suitable for many different applications.
- Complement to the KSB1116A
Applications
Power Management, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Power Dissipation Pd
750mW
DC Collector Current
1A
DC Current Gain hFE
200hFE
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
MSL
-
Collector Emitter Voltage V(br)ceo
60V
Continuous Collector Current
1A
Power Dissipation
750mW
Transistor Case Style
TO-226AA
Transistor Mounting
Through Hole
Transition Frequency
160MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for KSD1616AGBU
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate