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1+ | $7.370 |
10+ | $5.460 |
25+ | $5.260 |
50+ | $5.060 |
100+ | $4.860 |
300+ | $4.450 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ21195G
Newark Part No.26K4524
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo250V
Collector Emitter Voltage Max250V
Continuous Collector Current16A
DC Collector Current16A
Power Dissipation250W
Power Dissipation Pd250W
DC Current Gain hFE25hFE
Transistor MountingThrough Hole
No. of Pins2Pins
Transistor Case StyleTO-3
Transition Frequency4MHz
DC Current Gain hFE Min25hFE
Operating Temperature Max200°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The MJ21195G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
- Total harmonic distortion characterized
- High DC current gain
- Excellent gain linearity
- High SOA
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
250V
DC Collector Current
16A
Power Dissipation Pd
250W
Transistor Mounting
Through Hole
Transistor Case Style
TO-3
DC Current Gain hFE Min
25hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
250V
Continuous Collector Current
16A
Power Dissipation
250W
DC Current Gain hFE
25hFE
No. of Pins
2Pins
Transition Frequency
4MHz
Operating Temperature Max
200°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability