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MJD3055T4G.
Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 1.75 W, TO-252 (DPAK), Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 13 week(s)
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| Quantity | Price |
|---|---|
| 2500+ | $0.472 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,180.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD3055T4G.
Newark Part No.29AC8304
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation1.75W
Power Dissipation Pd1.75W
DC Collector Current10A
DC Current Gain hFE10hFE
Transistor MountingSurface Mount
Transistor Case StyleTO-252 (DPAK)
No. of Pins4Pins
Transition Frequency2MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Power Dissipation
1.75W
DC Collector Current
10A
Transistor Mounting
Surface Mount
No. of Pins
4Pins
DC Current Gain hFE Min
10hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
60V
Continuous Collector Current
10A
Power Dissipation Pd
1.75W
DC Current Gain hFE
10hFE
Transistor Case Style
TO-252 (DPAK)
Transition Frequency
2MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate