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MJD45H11T4G
Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.383 |
| 10+ | $0.381 |
| 25+ | $0.381 |
| 50+ | $0.381 |
| 100+ | $0.350 |
| 250+ | $0.350 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD45H11T4G
Newark Part No.10N9474
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
DC Collector Current8A
Continuous Collector Current8A
Power Dissipation20W
Power Dissipation Pd20W
DC Current Gain hFE60hFE
Transistor MountingSurface Mount
No. of Pins3Pins
Transistor Case StyleTO-252 (DPAK)
Transition Frequency90MHz
DC Current Gain hFE Min60hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The MJD45H11T4G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Electrically similar to popular D44H/D45H series
- Fast switching speeds
- Complementary pairs simplifies designs
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive, Signal Processing
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
80V
Continuous Collector Current
8A
Power Dissipation Pd
20W
Transistor Mounting
Surface Mount
Transistor Case Style
TO-252 (DPAK)
DC Current Gain hFE Min
60hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
80V
DC Collector Current
8A
Power Dissipation
20W
DC Current Gain hFE
60hFE
No. of Pins
3Pins
Transition Frequency
90MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability