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MJE182G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 3 A, 12.5 W, TO-225, Through Hole
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE182G
Newark Part No.26K4458
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Continuous Collector Current3A
Power Dissipation12.5W
Power Dissipation Pd12.5W
DC Collector Current3A
DC Current Gain hFE50hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-225
Transition Frequency50MHz
DC Current Gain hFE Min50hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The MJE182G is a 80V NPN complementary plastic silicon Bipolar Transistor designed for low power audio amplifier and low current, high speed switching applications. The MJE172 (PNP) and MJE182 (NPN) are complementary devices.
- High DC current gain
- High current-gain - bandwidth
- Annular construction for low leakages
- Epoxy meets UL94V-0 flammability rating
- 100VDC Collector to base voltage (VCBO)
- 7V Emitter to base voltage (VEBO)
- 6A Peak collector current
- 1ADC Base current (IB)
- 10°C/W Thermal resistance, junction to case
- 83.4°C/W Thermal resistance, junction to ambient
Applications
Power Management, Audio, Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
80V
Power Dissipation
12.5W
DC Collector Current
3A
Transistor Mounting
Through Hole
Transistor Case Style
TO-225
DC Current Gain hFE Min
50hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
3A
Power Dissipation Pd
12.5W
DC Current Gain hFE
50hFE
No. of Pins
3Pins
Transition Frequency
50MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate