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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE253G
Newark Part No.45J1503
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current4A
Power Dissipation1.5W
Power Dissipation Pd1.5W
DC Collector Current4A
DC Current Gain hFE40hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-225
Transition Frequency40MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The MJE253G is a -100V Silicon PNP Complementary Plastic Power Transistor designed for low power audio amplifier as well as low current and high speed switching applications.
- High collector-emitter sustaining voltage
- High DC current gain
- Low collector emitter saturation voltage
- High current gain bandwidth
- Annular construction for low leakages
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
100V
Power Dissipation
1.5W
DC Collector Current
4A
Transistor Mounting
Through Hole
Transistor Case Style
TO-225
DC Current Gain hFE Min
40hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
4A
Power Dissipation Pd
1.5W
DC Current Gain hFE
40hFE
No. of Pins
3Pins
Transition Frequency
40MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability