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MJE2955TG.
Bipolar (BJT) Single Transistor, PNP, 60 V, 10 A, 75 W, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoMJE2955TG.
Newark Part No.29AC8309
Product RangeMJxxxx Series
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE2955TG.
Newark Part No.29AC8309
Product RangeMJxxxx Series
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation75W
Power Dissipation Pd75W
DC Collector Current10A
Transistor MountingThrough Hole
DC Current Gain hFE2hFE
Transistor Case StyleTO-220
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min2hFE
Operating Temperature Max150°C
Qualification-
Product RangeMJxxxx Series
MSL-
SVHCLead
Product Overview
The MJE2955TG is a 10A PNP bipolar Power Transistor designed for use in general-purpose amplifier and switching applications.
- Complementary device
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
60V
Power Dissipation
75W
DC Collector Current
10A
DC Current Gain hFE
2hFE
No. of Pins
3Pins
DC Current Gain hFE Min
2hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
60V
Continuous Collector Current
10A
Power Dissipation Pd
75W
Transistor Mounting
Through Hole
Transistor Case Style
TO-220
Transition Frequency
2MHz
Operating Temperature Max
150°C
Product Range
MJxxxx Series
SVHC
Lead
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate