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MMBD301LT1G.
RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 600 mV, 0.9 pF, SOT-23
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| Quantity | Price |
|---|---|
| 1+ | $0.035 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$105.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBD301LT1G.
Newark Part No.26AC2193
Diode ConfigurationSingle
Reverse Voltage30V
Forward Current200mA
Forward Voltage600mV
Forward Voltage VF Max600mV
Diode Capacitance0.9pF
Diode Case StyleSOT-23
No. of Pins3 Pin
Operating Temperature Max125°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBD301LT1G is a Silicon Hot-carrier Detector and Switching Diode designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications.
- 15ps Extremely low minority carrier lifetime
- 1.5pF at VR=15V Maximum very low capacitance
- 13nA DC Low reverse leakage IR
- -55 to 125°C Operating junction temperature range
Applications
RF Communications, Sensing & Instrumentation, Industrial
Technical Specifications
Diode Configuration
Single
Forward Current
200mA
Forward Voltage VF Max
600mV
Diode Case Style
SOT-23
Operating Temperature Max
125°C
SVHC
No SVHC (27-Jun-2024)
Reverse Voltage
30V
Forward Voltage
600mV
Diode Capacitance
0.9pF
No. of Pins
3 Pin
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate