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                    • New Deals
                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. JFETs
                      Print Page

                      MMBF102

                      JFET Transistor, Junction Field Effect, -25 V, 20 mA, -8 V, SOT-23, 3 Pin, 150 °C

                      ONSEMI MMBF102
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerONSEMI
                      Manufacturer Part NoMMBF102
                      Newark Part No.18C7360
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      Available to Order
                      Manufacturer Standard Lead Time: 6 week(s)

                      Product Information

                      ManufacturerONSEMI
                      Manufacturer Part NoMMBF102
                      Newark Part No.18C7360
                      Technical Datasheet

                      Data Sheet

                      Breakdown Voltage Vbr-25V
                      Gate Source Breakdown Voltage Max-25V
                      Zero Gate Voltage Drain Current Idss Min-
                      Zero Gate Voltage Drain Current Max20mA
                      Gate Source Cutoff Voltage Max-8V
                      Transistor Case StyleSOT-23
                      Transistor TypeRF FET
                      No. of Pins3 Pin
                      Channel TypeN Channel
                      Operating Temperature Max150°C
                      Transistor MountingSurface Mount
                      Qualification-
                      Product Range-
                      MSL-
                      SVHCNo SVHC (14-Jun-2023)

                      Technical Specifications

                      Breakdown Voltage Vbr

                      -25V

                      Zero Gate Voltage Drain Current Idss Min

                      -

                      Gate Source Cutoff Voltage Max

                      -8V

                      Transistor Type

                      RF FET

                      Channel Type

                      N Channel

                      Transistor Mounting

                      Surface Mount

                      Product Range

                      -

                      SVHC

                      No SVHC (14-Jun-2023)

                      Gate Source Breakdown Voltage Max

                      -25V

                      Zero Gate Voltage Drain Current Max

                      20mA

                      Transistor Case Style

                      SOT-23

                      No. of Pins

                      3 Pin

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      MSL

                      -

                      Technical Docs (1)

                      Technical Data Sheet EN

                      Associated Products

                      1 Product Found

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (14-Jun-2023)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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