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MMBT3906LT1G
Bipolar (BJT) Single Transistor, General Purpose, PNP, 40 V, 200 mA, 225 mW, SOT-23, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoMMBT3906LT1G
Newark Part No.58M9148
Product RangeMMBTxxxx Series
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT3906LT1G
Newark Part No.58M9148
Product RangeMMBTxxxx Series
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Continuous Collector Current200mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency250MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx Series
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package.
- Collector-emitter voltage is -40VDC
- Collector-base voltage is -40VDC
- Collector current - continuous is -200mA DC
- Total device dissipation is a 225mW
- Junction and storage temperature is -65 to +150°C
- 60 minimum DC current gain (IC = -0.1mAdc, VCE = -1.0Vdc)
- 250MHz typical current-gain bandwidth product (IC = -10mAdc, VCE = -20Vdc, f = 100MHz)
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
200mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
MMBTxxxx Series
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
250MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate