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ManufacturerONSEMI
Manufacturer Part NoMMBT5550LT1G
Newark Part No.88H4795
Product RangeMMBTxxxx Series
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT5550LT1G
Newark Part No.88H4795
Product RangeMMBTxxxx Series
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo140V
Collector Emitter Voltage Max140V
Continuous Collector Current600mA
Power Dissipation225mW
Power Dissipation Pd225mW
Transistor Case StyleSOT-23
DC Collector Current600mA
DC Current Gain hFE250hFE
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min250hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Alternatives for MMBT5550LT1G
1 Product Found
Product Overview
The MMBT5550LT1G is a NPN high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications.
- Saves board space
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
140V
Power Dissipation
225mW
Transistor Case Style
SOT-23
DC Current Gain hFE
250hFE
No. of Pins
3Pins
DC Current Gain hFE Min
250hFE
Product Range
MMBTxxxx Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage V(br)ceo
140V
Continuous Collector Current
600mA
Power Dissipation Pd
225mW
DC Collector Current
600mA
Transistor Mounting
Surface Mount
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability