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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT5551LT1G
Newark Part No.03P0690
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Collector Emitter Voltage V(br)ceo160V
Continuous Collector Current60mA
Power Dissipation225mW
Power Dissipation Pd225mW
DC Collector Current60mA
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
DC Current Gain hFE250hFE
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min250hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBT5551LT1G is a NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified.
- Halogen-free
Applications
Automotive, Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
160V
Power Dissipation
225mW
DC Collector Current
60mA
Transistor Mounting
Surface Mount
No. of Pins
3Pins
DC Current Gain hFE Min
250hFE
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max
160V
Continuous Collector Current
60mA
Power Dissipation Pd
225mW
Transistor Case Style
SOT-23
DC Current Gain hFE
250hFE
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for MMBT5551LT1G
2 Products Found
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability