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MMSD301T1G
RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 600 mV, 0.9 pF, SOD-123
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| Quantity | Price |
|---|---|
| 1+ | $0.213 |
| 25+ | $0.132 |
| 50+ | $0.106 |
| 100+ | $0.081 |
| 250+ | $0.070 |
| 500+ | $0.060 |
| 1000+ | $0.052 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMSD301T1G
Newark Part No.77M8937
Technical Datasheet
Diode ConfigurationSingle
Reverse Voltage30V
Forward Current200mA
Forward Voltage600mV
Forward Voltage VF Max600mV
Diode Capacitance0.9pF
Diode Case StyleSOD-123
No. of Pins2 Pin
Diode MountingSurface Mount
Operating Temperature Max125°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
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Product Overview
The MMSD301T1G is a Schottky Barrier Diode designed for high-efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications.
- Extremely low minority carrier lifetime
- Very low capacitance
- Low reverse leakage
- -55 to 125°C Operating junction temperature range
Applications
RF Communications, Sensing & Instrumentation, Industrial
Technical Specifications
Diode Configuration
Single
Forward Current
200mA
Forward Voltage VF Max
600mV
Diode Case Style
SOD-123
Diode Mounting
Surface Mount
Product Range
-
Reverse Voltage
30V
Forward Voltage
600mV
Diode Capacitance
0.9pF
No. of Pins
2 Pin
Operating Temperature Max
125°C
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability