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Available to Order
Manufacturer Standard Lead Time: 13 week(s)
Quantity | Price |
---|---|
4000+ | $0.552 |
8000+ | $0.551 |
Price for:Each (Supplied on Full Reel)
Minimum: 4000
Multiple: 4000
$2,208.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDT456P
Newark Part No.58K8104
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.5A
Drain Source On State Resistance30mohm
On Resistance Rds(on)0.026ohm
Transistor MountingSurface Mount
Power Dissipation Pd3W
Rds(on) Test Voltage10V
Transistor Case StyleSOT-223
Gate Source Threshold Voltage Max1.5V
Power Dissipation3W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The NDT456P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density and DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
30mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
7.5A
On Resistance Rds(on)
0.026ohm
Power Dissipation Pd
3W
Transistor Case Style
SOT-223
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Alternatives for NDT456P
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Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate