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Product Information
ManufacturerONSEMI
Manufacturer Part NoNJW0281G
Newark Part No.95M6875
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max250V
Collector Emitter Voltage V(br)ceo250V
Continuous Collector Current15A
Power Dissipation150mW
Power Dissipation Pd150mW
DC Collector Current15A
DC Current Gain hFE75hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-3P
No. of Pins3Pins
Transition Frequency30MHz
DC Current Gain hFE Min75hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The NJW0281G is a NPN Bipolar Power Transistor with superior gain linearity and safe operating area performance. This transistor is ideal for high fidelity audio amplifier output stages and other linear applications.
- Complement to NJW0302G
- Exceptional Safe Operating Area
- Gain Matching within 10% from 50 mA to 3 A
- Excellent Gain Linearity
- High BVCEO
- High Frequency
- Reliable Performance at Higher Powers
- Accurate Reproduction of Input Signal
- Greater Dynamic Range
- High Amplifier Bandwidth
Applications
Audio, Industrial, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
250V
Power Dissipation
150mW
DC Collector Current
15A
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
75hFE
Qualification
-
MSL
-
Collector Emitter Voltage Max
250V
Continuous Collector Current
15A
Power Dissipation Pd
150mW
DC Current Gain hFE
75hFE
Transistor Case Style
TO-3P
Transition Frequency
30MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate