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NST846MTWFTBG
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 570 mW, XDFNW, Surface Mount
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2,895 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.526 |
| 10+ | $0.323 |
| 25+ | $0.284 |
| 50+ | $0.244 |
| 100+ | $0.204 |
| 250+ | $0.179 |
| 500+ | $0.153 |
| 1000+ | $0.137 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$2.63
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNST846MTWFTBG
Newark Part No.20AM7289
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max65V
Continuous Collector Current100mA
Power Dissipation570mW
Transistor Case StyleXDFNW
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min220hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
NST846MTWFTBG is a NPN, 65V, 100mA general purpose transistor designed for general purpose amplifier applications. It is housed in an ultra−compact DFN1010−3 with wettable flanks, recommended for the automotive industry’s optical inspection methods. The transistor is ideal for low−power surface mount applications where board space and reliability are at a premium.
- Total power dissipation per device at TA = 25°C is 570mW
- Junction temperature range from −65 to +150°C
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
100mA
Transistor Case Style
XDFNW
No. of Pins
3Pins
DC Current Gain hFE Min
220hFE
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage Max
65V
Power Dissipation
570mW
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability