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NTBG020N120SC1
Silicon Carbide MOSFET, Single, N Channel, 98 A, 1.2 kV, 0.02 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTBG020N120SC1
Newark Part No.54AH9493
Product RangeEliteSiC Series
Technical Datasheet
490 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $51.150 |
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$51.15
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG020N120SC1
Newark Part No.54AH9493
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id98A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.02ohm
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Power Dissipation Pd468W
Gate Source Threshold Voltage Max2.7V
Power Dissipation468W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.02ohm
No. of Pins
7Pins
Power Dissipation Pd
468W
Power Dissipation
468W
Product Range
EliteSiC Series
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
98A
On Resistance Rds(on)
0.02ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability