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NTJD5121NT1G
Dual MOSFET, N Channel, 60 V, 60 V, 304 mA, 304 mA, 1 ohm
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| 25+ | $0.032 |
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| 100+ | $0.032 |
| 250+ | $0.032 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD5121NT1G
Newark Part No.08R3934
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id295mA
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel304mA
Continuous Drain Current Id P Channel304mA
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel266mW
Power Dissipation P Channel266mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
295mA
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
304mA
Drain Source On State Resistance P Channel
1ohm
No. of Pins
6Pins
Power Dissipation P Channel
266mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id N Channel
304mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
266mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate