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NTR5198NLT1G
Power MOSFET, N Channel, 60 V, 2.2 A, 0.107 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTR5198NLT1G
Newark Part No.49Y1205
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.2A
On Resistance Rds(on)0.107ohm
Drain Source On State Resistance0.107ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd1.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
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Product Overview
The NTR5198NLT1G is a N-channel Power MOSFET offers 60V drain source voltage and 2.2A continuous drain current. It has low RDS (ON) for low conduction losses and improved efficiency.
- Small footprint surface-mount package
- Halogen-free
- -55 to 150°C Operating junction temperature range
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.107ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
1.5W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2.2A
Drain Source On State Resistance
0.107ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate