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Product Information
ManufacturerONSEMI
Manufacturer Part NoNZT660A
Newark Part No.31Y3299
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max60V
Collector Emitter Voltage V(br)ceo60V
Continuous Collector Current3A
DC Collector Current3A
Power Dissipation2W
Power Dissipation Pd2W
Transistor Case StyleSOT-223
DC Current Gain hFE25hFE
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency75MHz
DC Current Gain hFE Min25hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The NZT660A is a PNP low-saturation Bipolar Transistor designed with high-current gain and low-saturation voltage with collector currents up to 3A continuous.
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
60V
DC Collector Current
3A
Power Dissipation Pd
2W
DC Current Gain hFE
25hFE
No. of Pins
3Pins
DC Current Gain hFE Min
25hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
60V
Continuous Collector Current
3A
Power Dissipation
2W
Transistor Case Style
SOT-223
Transistor Mounting
Surface Mount
Transition Frequency
75MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability