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RD3G03BATTL1
MOSFET, P-CH, 40V, 35A, TO-252 ROHS COMPLIANT: YES
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1,389 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.870 |
| 10+ | $1.410 |
| 25+ | $1.260 |
| 50+ | $1.110 |
| 100+ | $0.949 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$9.35
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Product Information
ManufacturerROHM
Manufacturer Part NoRD3G03BATTL1
Newark Part No.22AJ0389
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id35A
Drain Source On State Resistance0.015ohm
On Resistance Rds(on)0.015ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation56W
Power Dissipation Pd56W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (23-Jan-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.015ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
56W
No. of Pins
3Pins
Product Range
-
SVHC
Lead (23-Jan-2024)
Transistor Polarity
P Channel
Continuous Drain Current Id
35A
On Resistance Rds(on)
0.015ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
56W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability