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SCT3120ALGC11
Silicon Carbide MOSFET, Single, N Channel, 21 A, 650 V, 0.12 ohm, TO-247N
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216 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $10.500 |
| 10+ | $10.260 |
| 25+ | $7.100 |
| 60+ | $6.780 |
| 120+ | $6.500 |
| 270+ | $6.180 |
| 510+ | $6.070 |
Price for:Each
Minimum: 1
Multiple: 1
$10.50
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3120ALGC11
Newark Part No.05AC9466
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id21A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.12ohm
On Resistance Rds(on)0.12ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation Pd103W
Power Dissipation103W
Operating Temperature Max175°C
Product Range-
MSLMSL 1 - Unlimited
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.12ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5.6V
Power Dissipation
103W
Product Range
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source On State Resistance
0.12ohm
Transistor Case Style
TO-247N
Rds(on) Test Voltage
18V
Power Dissipation Pd
103W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability