Print Page
SEMIX703GB126HD
IGBT Module, Dual, 650 A, 1.2 kV, 125 °C, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX703GB126HD
Newark Part No.02M8563
Technical Datasheet
IGBT ConfigurationDual
Transistor PolarityDual N Channel
DC Collector Current650A
Continuous Collector Current650A
Collector Emitter Saturation Voltage1.2kV
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd-
Power Dissipation-
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max125°C
Operating Temperature Max125°C
Transistor Case StyleModule
No. of Pins11Pins
IGBT TerminationStud
IGBT TechnologyIGBT 3 [Trench]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
Technical Specifications
IGBT Configuration
Dual
DC Collector Current
650A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
125°C
No. of Pins
11Pins
IGBT Technology
IGBT 3 [Trench]
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
Dual N Channel
Continuous Collector Current
650A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
-
Junction Temperature, Tj Max
125°C
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate