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GD200HFX65C2S
IGBT MODULE, 650V, 247A ROHS COMPLIANT: YES
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| Quantity | Price |
|---|---|
| 1+ | $107.890 |
| 5+ | $105.940 |
| 10+ | $103.900 |
| 36+ | $102.880 |
| 60+ | $101.890 |
| 108+ | $97.890 |
Price for:Each
Minimum: 1
Multiple: 1
$107.89
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD200HFX65C2S
Newark Part No.25AK0616
Technical Datasheet
IGBT ConfigurationHalf Bridge
DC Collector Current247A
Continuous Collector Current247A
Collector Emitter Saturation Voltage1.45V
Collector Emitter Saturation Voltage Vce(on)1.45V
Power Dissipation612W
Power Dissipation Pd612W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage V(br)ceo650V
Collector Emitter Voltage Max650V
IGBT TechnologyTrench
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
Continuous Collector Current
247A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation Pd
612W
Operating Temperature Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
650V
Transistor Mounting
Panel
SVHC
To Be Advised
DC Collector Current
247A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation
612W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage V(br)ceo
650V
IGBT Technology
Trench
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate