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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBUL1102EFP
Newark Part No.25M7919
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBUL1102EFP
Newark Part No.25M7919
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max450V
Collector Emitter Voltage V(br)ceo450V
Continuous Collector Current4A
Power Dissipation Pd30W
Power Dissipation30W
DC Collector Current4A
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min20hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The BUL1102EFP is a NPN fast-switching Power Transistor manufactured in Multi Epitaxial Planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. It has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
- High voltage capability
- Very high switching speed
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
450V
Power Dissipation Pd
30W
DC Collector Current
4A
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Voltage Max
450V
Continuous Collector Current
4A
Power Dissipation
30W
Transistor Case Style
TO-220FP
No. of Pins
3Pins
DC Current Gain hFE Min
20hFE
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability