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SCTW90N65G2V
Silicon Carbide MOSFET, Single, N Channel, 119 A, 650 V, 0.018 ohm, TO-247
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW90N65G2V
Newark Part No.69AH2147
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $45.840 |
| 5+ | $44.000 |
| 10+ | $42.160 |
| 25+ | $40.310 |
| 50+ | $38.470 |
| 100+ | $38.060 |
| 250+ | $37.650 |
Price for:Each
Minimum: 1
Multiple: 1
$45.84
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW90N65G2V
Newark Part No.69AH2147
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id119A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.018ohm
On Resistance Rds(on)0.018ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.2V
Power Dissipation Pd565W
Power Dissipation565W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.018ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.2V
Power Dissipation
565W
Product Range
-
Transistor Polarity
N Channel
Continuous Drain Current Id
119A
Drain Source On State Resistance
0.018ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation Pd
565W
Operating Temperature Max
200°C
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate