Print Page
STD4NK80ZT4
Power MOSFET, N Channel, 800 V, 1.5 A, 3 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD4NK80ZT4
Newark Part No.33R1164
Technical Datasheet
Packaging Options
5,393 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.500 |
| 10+ | $2.000 |
| 25+ | $1.770 |
| 50+ | $1.560 |
| 100+ | $1.330 |
| 250+ | $1.160 |
| 500+ | $0.930 |
| 1000+ | $0.881 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.50
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD4NK80ZT4
Newark Part No.33R1164
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id1.5A
Drain Source On State Resistance3ohm
On Resistance Rds(on)3ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd80W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation80W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The STD4NK80ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, specialties is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.5A
On Resistance Rds(on)
3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
80W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
3ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
80W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for STD4NK80ZT4
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability