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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD65N55F3
Newark Part No.33R1174
Technical Datasheet
Packaging Options
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25+ | $2.570 |
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100+ | $2.210 |
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500+ | $1.980 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD65N55F3
Newark Part No.33R1174
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id32A
Drain Source On State Resistance6.5ohm
On Resistance Rds(on)6.5ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd110W
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Product Overview
The STD65N55F3 is a STripFET™ N-channel enhancement-mode Power MOSFET designed with latest refinement of unique Single Feature Size™ strip-based process. The process decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.
- Standard threshold drive
- 100% Avalanche tested
- -55 to 175°C Operating junction temperature range
Applications
Automotive, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
32A
On Resistance Rds(on)
6.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
110W
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
6.5ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability