Print Page
STN1HNK60
Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTN1HNK60
Newark Part No.33R1234
Technical Datasheet
Packaging Options
11,972 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.100 |
| 10+ | $0.889 |
| 25+ | $0.776 |
| 50+ | $0.683 |
| 100+ | $0.583 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.50
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTN1HNK60
Newark Part No.33R1234
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id500mA
On Resistance Rds(on)8ohm
Drain Source On State Resistance8.5ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3.3W
Gate Source Threshold Voltage Max3V
Power Dissipation3.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The STN1HNK60 is a 600V N-channel SuperMESH™ MOSFET with extreme optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- Extremely high dv/dt capability
- ESD improved capability
- 100% Avalanche tested
- New high voltage benchmark
- Gate charge minimized
Applications
Power Management, Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
500mA
Drain Source On State Resistance
8.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.3W
Power Dissipation
3.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
600V
On Resistance Rds(on)
8ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for STN1HNK60
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability