Print Page
STP12NM50.
Power MOSFET, N Channel, 550 V, 12 A, 0.35 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP12NM50.
Newark Part No.28AC3431
Product RangeSTP Series
Technical Datasheet
3,480 In Stock
Need more?
Delivery in 2-4 Business Days
Need more?
| Quantity | Price |
|---|---|
| 1000+ | $2.170 |
| 2500+ | $1.880 |
Price for:Each
Minimum: 1000
Multiple: 1
$2,170.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP12NM50.
Newark Part No.28AC3431
Product RangeSTP Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds550V
Continuous Drain Current Id12A
On Resistance Rds(on)0.35ohm
Drain Source On State Resistance0.35ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd160W
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeSTP Series
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- 100% Avalanche tested
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications
Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
550V
On Resistance Rds(on)
0.35ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
160W
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.35ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
Power Dissipation
160W
Operating Temperature Max
150°C
Product Range
STP Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate