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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP9NK60ZFP
Newark Part No.26M3717
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP9NK60ZFP
Newark Part No.26M3717
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id7A
On Resistance Rds(on)0.95ohm
Drain Source On State Resistance0.95ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Power Dissipation Pd30W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The STP9NK60ZFP is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Improved ESD capability
- 100% Avalanche tested
- Extremely high dV/dt capability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.95ohm
Transistor Case Style
TO-220FP
Power Dissipation Pd
30W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
Drain Source On State Resistance
0.95ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
30W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability