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STW12NK90Z
Power MOSFET, N Channel, 900 V, 11 A, 0.88 ohm, TO-247, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW12NK90Z
Newark Part No.34X2882
Technical Datasheet
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| Quantity | Price |
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| 1+ | $2.740 |
| 10+ | $2.740 |
| 25+ | $2.510 |
| 60+ | $2.510 |
| 120+ | $2.510 |
| 270+ | $2.320 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW12NK90Z
Newark Part No.34X2882
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id11A
Drain Source On State Resistance0.88ohm
On Resistance Rds(on)0.72ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation230W
Power Dissipation Pd230W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
- 900V, 11A N-channel zener protected SuperMESH™ power MOSFET in 3 pin TO-247 package
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Very good manufacturing repeatability
- Suitable for switching applications
- Extreme optimization of ST’s well established strip-based PowerMESH™ layout
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
900V
Drain Source On State Resistance
0.88ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
230W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.72ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
Power Dissipation Pd
230W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate