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2SA1943N(S1,E,S)
Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $3.970 |
| 10+ | $3.050 |
| 100+ | $2.130 |
| 500+ | $1.880 |
| 1000+ | $1.750 |
| 2500+ | $1.700 |
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$3.97
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Product Information
ManufacturerTOSHIBA
Manufacturer Part No2SA1943N(S1,E,S)
Newark Part No.08AK8206
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max230V
Collector Emitter Voltage V(br)ceo230V
DC Collector Current15A
Continuous Collector Current15A
Power Dissipation150W
Power Dissipation Pd150W
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency30MHz
DC Current Gain hFE Min35hFE
DC Current Gain hFE35hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
230V
Continuous Collector Current
15A
Power Dissipation Pd
150W
Transistor Mounting
Through Hole
Transition Frequency
30MHz
DC Current Gain hFE
35hFE
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max
230V
DC Collector Current
15A
Power Dissipation
150W
Transistor Case Style
TO-3P
No. of Pins
3Pins
DC Current Gain hFE Min
35hFE
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability