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MT3S111(TE85L,F)
Bipolar Transistor Array, NPN, 6 V, 100 mA, 160 mW
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| Quantity | Price |
|---|---|
| 1+ | $0.391 |
| 10+ | $0.391 |
| 25+ | $0.361 |
| 50+ | $0.361 |
| 100+ | $0.361 |
| 250+ | $0.361 |
| 500+ | $0.361 |
| 1000+ | $0.361 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoMT3S111(TE85L,F)
Newark Part No.09AK5786
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max NPN6V
Collector Emitter Voltage Max6V
Continuous Collector Current100mA
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN100mA
Power Dissipation700mW
Continuous Collector Current PNP-
Power Dissipation NPN160mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN200hFE
Transition Frequency11.5GHz
DC Current Gain hFE Min200hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleTO-236
No. of Pins3Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN11.5GHz
Transition Frequency PNP-
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
6V
Collector Emitter Voltage Max PNP
-
Power Dissipation
700mW
Power Dissipation NPN
160mW
DC Current Gain hFE Min NPN
200hFE
DC Current Gain hFE Min
200hFE
Transistor Case Style
TO-236
Transistor Mounting
Surface Mount
Transition Frequency NPN
11.5GHz
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max NPN
6V
Continuous Collector Current
100mA
Continuous Collector Current NPN
100mA
Continuous Collector Current PNP
-
Power Dissipation PNP
-
Transition Frequency
11.5GHz
DC Current Gain hFE Min PNP
-
No. of Pins
3Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate