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TTA1943
Bipolar Transistor Array, Audio, PNP
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTTA1943
Newark Part No.55T7375
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max230V
Continuous Collector Current15A
Power Dissipation150W
Transition Frequency30MHz
DC Current Gain hFE Min80hFE
Transistor Case StyleTO-3PL
No. of Pins3Pins
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (15-Jan-2018)
Product Overview
The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
- Collector to emitter voltage (Vce) is -230V
- Collector current (Ic) is -15A
- Power dissipation (Pd) is 150W
- Collector to emitter saturation voltage of -3V at -8A collector current
- DC current gain (hFE) of 80 at -1A collector current
- Operating junction temperature range from 150°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
15A
Transition Frequency
30MHz
Transistor Case Style
TO-3PL
Transistor Mounting
Through Hole
Product Range
-
MSL
-
Collector Emitter Voltage Max
230V
Power Dissipation
150W
DC Current Gain hFE Min
80hFE
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate