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Product Information
ManufacturerVISHAY
Manufacturer Part No2N7002K-T1-E3
Newark Part No.06J8894
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
Drain Source On State Resistance7.5ohm
On Resistance Rds(on)7.5ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd200mW
Transistor Case StyleTO-236
Gate Source Threshold Voltage Max2V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The 2N7002K-T1-E3 is a 60V N-channel MOSFET designed for use with direct logic-level interface and battery operated systems. It is also suitable for relays, solenoids, lamps, hammers, display, memories and transistor drivers.
- Halogen-free according to IEC 61249-2-21 definition
- Low on-resistance
- Low threshold
- Low input capacitance (25pF)
- Fast switching speed (25ns)
- Low input and output leakage
- TrenchFET® power MOSFET
- 2000V ESD protection
- Low offset voltage
- Low-voltage operation
- Easily driven without buffer
- High-speed circuits
- Low error voltage
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
7.5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
200mW
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
7.5ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-236
Power Dissipation
200mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate