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IRF640PBF
Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.480 |
| 10+ | $1.480 |
| 25+ | $1.370 |
| 50+ | $1.280 |
| 100+ | $1.270 |
| 500+ | $1.190 |
| 1000+ | $1.160 |
| 2500+ | $1.140 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF640PBF
Newark Part No.63J7355
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id18A
Drain Source On State Resistance0.18ohm
On Resistance Rds(on)0.18ohm
Transistor MountingThrough Hole
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StyleTO-220
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRF640PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175°C Operating temperature
- Easy to parallel
- Simple drive requirement
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.18ohm
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
2V
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability