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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF9610PBF
Newark Part No.63J7433
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id1.8A
On Resistance Rds(on)3ohm
Drain Source On State Resistance3ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd20W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max4V
Power Dissipation20W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Dynamic dV/dt rating
- Fast switching
- 150°C Operating temperature
- Easy to parallel
- Simple drive requirement
Applications
Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
3ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
20W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
1.8A
Drain Source On State Resistance
3ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
20W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability