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IRFB9N65APBF
Power MOSFET, N Channel, 650 V, 8.5 A, 0.93 ohm, TO-220, Through Hole
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|---|---|
| 1+ | $0.771 |
| 10+ | $0.771 |
| 25+ | $0.771 |
| 50+ | $0.771 |
| 100+ | $0.771 |
| 500+ | $0.771 |
| 1000+ | $0.771 |
| 2500+ | $0.771 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFB9N65APBF
Newark Part No.56AJ9864
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.93ohm
On Resistance Rds(on)0.93ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd167W
Power Dissipation167W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.93ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation Pd
167W
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
8.5A
On Resistance Rds(on)
0.93ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation
167W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate