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IRFI9530GPBF
Power MOSFET, P Channel, 100 V, 7.7 A, 0.3 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.530 |
| 10+ | $1.460 |
| 25+ | $1.460 |
| 50+ | $1.450 |
| 100+ | $1.450 |
| 500+ | $1.420 |
| 1000+ | $1.390 |
| 2500+ | $1.370 |
Price for:Each
Minimum: 1
Multiple: 1
$1.53
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFI9530GPBF
Newark Part No.38K2537
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id7.7A
Drain Source On State Resistance0.3ohm
On Resistance Rds(on)0.3ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation38W
Power Dissipation Pd38W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Product Overview
- P-channel power MOSFET in TO-220 FULLPAK package
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8mm
- 175°C operating temperature
- Dynamic dV/dt rating
- Low thermal resistance
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.3ohm
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
38W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
7.7A
On Resistance Rds(on)
0.3ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
38W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate