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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRL510PBF
Newark Part No.97K2385
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5.6A
On Resistance Rds(on)0.54ohm
Drain Source On State Resistance0.54ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd43W
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
Product Overview
Third generation power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dV/dot rating
- Repetitive avalanche rated
- Logic-level gate drive
- 175°C operating temperature
- Fast switching
- Ease of paralleling
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.54ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
5V
Power Dissipation Pd
43W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
5.6A
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
Power Dissipation
43W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate