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IRLI640GPBF
Power MOSFET, N Channel, 200 V, 9.9 A, 0.18 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 72 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $2.010 |
| 2500+ | $1.980 |
Price for:Each
Minimum: 1000
Multiple: 1000
$2,010.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLI640GPBF
Newark Part No.63J7596
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9.9A
Drain Source On State Resistance0.18ohm
On Resistance Rds(on)0.18ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Power Dissipation Pd40W
Transistor Case StyleTO-220FP
Gate Source Threshold Voltage Max2V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
40W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
9.9A
On Resistance Rds(on)
0.18ohm
Rds(on) Test Voltage
5V
Transistor Case Style
TO-220FP
Power Dissipation
40W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate