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SI2302DDS-T1-GE3.
Power MOSFET, N Channel, 20 V, 2.6 A, 0.045 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.138 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$414.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302DDS-T1-GE3.
Newark Part No.28AC2122
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.045ohm
On Resistance Rds(on)0.045ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd710mW
Gate Source Threshold Voltage Max-
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.045ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
0.045ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
710mW
Power Dissipation
710mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate