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SI2304BDS-T1-E3
Power MOSFET, N Channel, 30 V, 3.2 A, 0.055 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2304BDS-T1-E3
Newark Part No.85W2138
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.2A
On Resistance Rds(on)0.055ohm
Drain Source On State Resistance0.055ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.08W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleSOT-23
Power Dissipation1.08W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2304BDS-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.055ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
3.2A
Drain Source On State Resistance
0.055ohm
Power Dissipation Pd
1.08W
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
1.08W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability