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SI2304DDS-T1-GE3.
Power MOSFET, N Channel, 30 V, 3.6 A, 0.049 ohm, TO-236, Surface Mount
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6,000 In Stock
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| Quantity | Price |
|---|---|
| 3000+ | $0.146 |
| 6000+ | $0.145 |
| 12000+ | $0.135 |
| 18000+ | $0.134 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$438.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2304DDS-T1-GE3.
Newark Part No.26AC3313
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.6A
On Resistance Rds(on)0.049ohm
Drain Source On State Resistance0.049ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.1W
Rds(on) Test Voltage10V
Transistor Case StyleTO-236
Gate Source Threshold Voltage Max2.2V
Power Dissipation1.1W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.049ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
3.6A
Drain Source On State Resistance
0.049ohm
Power Dissipation Pd
1.1W
Transistor Case Style
TO-236
Power Dissipation
1.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate